METHOD FOR CLEANING SUBSTRATE FOR SELECTIVE EPITAXIAL GROWTH

摘要

PURPOSE: A method for cleaning substrate for the selective epitaxial growth(SEG) is provided to lower the temperature without bad influence of device characteristic and protect decline of device characteristic at SEG. CONSTITUTION: A silicon substrate(1) is put on the center of bottom region in a chamber. A hot wire(20) is placed at the upper region apart from the substrate. An influx port for cleansing gas is installed on the one side of the chamber and an exhaust port(12) is installed on the bottom surface of the chamber. The hot wire is heated over 1000 and gases are decomposed to be strongly-reactive atoms near hot wire and diffused toward substrate and thus cleaning response on the substrate is activated even though the temperature of the substrate is lowered.