CAPACITOR OF SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

PURPOSE: A capacitor of a semiconductor device and the method of manufacturing the same are provided to reduce the production cost by reducing a number of unit process and a time of unit process in contact plug formation. CONSTITUTION: A charge storage electrode having MPS(meta-stable-silicon)(35) structure is formed on a semiconductor substrate(21). A thermal doping process is preformed on the charge storage electrode of MPS in phosphorus gas and temperature range from 550 to 650 degrees C. A TaON dielectric layer(37) is formed on the charge storage electrode. An upper electrode(39) is formed on the TaON dielectric layer.