| 摘要 |
PURPOSE: A high voltage device and the method of manufacturing the same are provided to increase breakdown voltage and simultaneously improve integration by reducing device size. CONSTITUTION: A high voltage device comprises a semiconductor substrate(31) having n type drift regions(33a,33b) and a drain(35a) and a source region(35b), a trench(37) between the drift regions, a channel region(38), a gate insulation layer(40a), and a gate electrode(42a) isolated by an oxide layer(39a), a drain contact(44a) and a source contact(44b) connecting the drain and source region through a BPSG layer(43).
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