| 发明名称 |
MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE |
| 摘要 |
PURPOSE: To actualize sufficient yield and productivity by suppressing the production of dust due to the removal of a reverse-surface film formed by growing films on both the surfaces of a semiconductor substrate. CONSTITUTION: The semiconductor substrate 301 has polycrystalline silicon films 303 formed on both its surfaces, and a silicide film 304 is formed only on the top surface side of the semiconductor substrate 301; and the polycrystalline silicon film 303 and silicide film 304 are machined to form gate electrodes 303a, and an insulating film for side wall formation which covers the gate electrodes 303a is formed on both the surfaces of the semiconductor substrate 301. The insulating film for side wall formation formed on the top surface side of the semiconductor substrate 301 is etched to form a side wall film, an inter-layer insulating film which covers the gate electrodes 303a is formed only on the top surface side of the semiconductor substrate 301; and the polycrystalline silicon film 303a and the insulating film for side wall formation which are formed on the reverse surface side of the semiconductor substrate 303, and the reverse surface of the semiconductor substrate 301, are ground to manufacture a semiconductor device.
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| 申请公布号 |
KR20020083132(A) |
申请公布日期 |
2002.11.01 |
| 申请号 |
KR20020021464 |
申请日期 |
2002.04.19 |
| 申请人 |
NEC ELECTRONICS CORPORATION |
发明人 |
HAYASHI TETSUYA;TAKAHASHI TOSHIFUMI |
| 分类号 |
H01L21/304;H01L21/00;H01L21/02;H01L21/30;H01L21/31;H01L21/3205;H01L21/3213;H01L21/336;H01L21/46;H01L21/4763;H01L21/78;(IPC1-7):H01L21/304 |
主分类号 |
H01L21/304 |
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