发明名称 Semiconductor device and active matrix type display
摘要 In an active matrix type display having built-in drivers, a metal layer (32) is formed over a portion of a transparent substrate and a buffer layer (11) is provided over both the region where the metal layer (32) is formed and over the region where the metal layer (32) is not formed. Above the buffer layer (11), a first polycrystalline silicon film (14) is provided over the region where the metal layer is formed and a second polycrystalline silicon film (140) is provided over the region where the metal layer is not formed. A buffer layer (11) with sufficient thickness and thermal capacity can provide sufficient distance between the active layers and the lower metal layer to alleviate thermal leakage caused by the metal layer. A first polycrystalline silicon film (14) and a second polycrystalline film (140) each having a proper grain size can be obtained through laser annealing applied under the same conditions on an amorphous silicon film formed over the buffer layer (11).
申请公布号 US2002158298(A1) 申请公布日期 2002.10.31
申请号 US20020112929 申请日期 2002.03.28
申请人 YAMADA TSUTOMU 发明人 YAMADA TSUTOMU
分类号 G02F1/1368;G09F9/30;H01L21/20;H01L21/336;H01L21/77;H01L27/12;H01L29/786;(IPC1-7):H01L27/095 主分类号 G02F1/1368
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