METHOD OF X-RAY ANALYSIS IN A PARTICLE-OPTICAL APPARATUS

摘要

Samples such as semiconductor wafers may be subjected to an elementary analysis by irradiation by means of electrons and measurement of the X-rays (30) generated in the sample. In order to achieve a high spatial resolution, two adjacent holes (6, 8) are formed in the sample surface, leaving a very thin separating wall (10) between said holes and hence limiting the dimension of the interaction volume (24). However, electrons pass through the wall, thus generating disturbing X-rays in the walls of the hole (8) behind the wall. According to the invention the hole (8) behind the separating wall (10) is provided with a stopping material (12) of an elementary composition which deviates from that of the wall (10). If the wall to be analyzed contains silicon, the stopping material (12) should preferably be platinum or carbon.