| 摘要 |
<p>PROBLEM TO BE SOLVED: To reduce the contact resistance between a high melting point metal light-shielding layer and an ITO film in the case where the ITO film is formed on the high melting point metal light-shielding layer such as a Ti layer by sputtering. SOLUTION: The ITO film (a transparent pixel electrode 3) in contact with the high melting point metal light-shielding layer is formed by sputtering discharge gas containing O2 and Ar on the high melting point metal light-shielding layer (for example, a light shielding layer 9 on a TFT substrate 4). In this method, O2 is added to the discharge gas after 3 seconds from the start of the discharge.</p> |
