MANUFACTURING APPARATUS AND MANUFACTURING METHOD FOR SILICON SINGLE CRYSTAL

摘要

PROBLEM TO BE SOLVED: To provide a single crystal manufacturing apparatus and manufacturing method which prevent the deposition of oxides in an air exit of a growth furnace, assures a stable exhaust capacity and makes crystal growth work possible for a long period of time by surely holding a silicon melt within a growth furnace even when the silicon melt of a high temperature flows out of a crucible, and in addition, by suppressing the deposition of the oxides near on air exit of the growth furnace and preventing the degradation in the exhaust capacity of inert gas. SOLUTION: The manufacturing apparatus for growing the silicon single crystal by a Czochralski method is provided with a waste gas pipe extension member 34 so as to communicate with the air exit 31 disposed in the lower part of the growth furnace to exhaust the inert gas flowing in the growth furnace and is provided with a protective gas pipe 32 so as to enclose this waste gas pipe extension member.