发明名称 MAGNETORESISTANCE EFFECT ELEMENT AND MANUFACTURING METHOD THEREFOR
摘要 PROBLEM TO BE SOLVED: To provide a magnetoresistance effect element having a new intermediate layer, realizing superior characteristics. SOLUTION: The magnetoresistance effect element comprises an intermediate layer and a pair of magnetic layers which sandwich the intermediate layer. In this case, the intermediate layer contains at least three types of elements selected from among a group consisting of group II to group XVII elements, and the element is at least one type selected from among a group consisting of F, O, N, C and B.
申请公布号 JP2002319722(A) 申请公布日期 2002.10.31
申请号 JP20020013220 申请日期 2002.01.22
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 HIRAMOTO MASAYOSHI;ODAKAWA AKIHIRO;MATSUKAWA NOZOMI;IIJIMA KENJI;SAKAKIMA HIROSHI
分类号 G01R33/09;G11B5/39;H01F10/30;H01F10/32;H01F41/32;H01L43/08;H01L43/12;(IPC1-7):H01L43/08 主分类号 G01R33/09
代理机构 代理人
主权项
地址