| 发明名称 |
ION-BEAM DEPOSITION PROCESS FOR MANUFACTURING BINARY PHOTOMASK BLANKS |
| 摘要 |
An ion-beam film deposition process is described for fabricating binary photomask blanks for selected lithographic wavelengths <400 nm, the said film essentially consisting of the MOxCyNz compound where M is selected from chromium, molybdenum, tungsten, or tantalum or combination thereof in asingle layer or a multiple layer configuration. |
| 申请公布号 |
WO02086622(A2) |
申请公布日期 |
2002.10.31 |
| 申请号 |
WO2002US12542 |
申请日期 |
2002.04.19 |
| 申请人 |
E.I. DU PONT DE NEMOURS AND COMPANY;CARCIA, PETER, FRANCIS;DIEU, LAURENT |
发明人 |
CARCIA, PETER, FRANCIS;DIEU, LAURENT |
| 分类号 |
C23C14/00;C23C14/06;C23C14/32;C23C14/34;C23C14/46;G03F1/54;G03F1/58;G03F1/68;H01L21/027 |
主分类号 |
C23C14/00 |
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