发明名称 Process and apparatus for treating a workpiece such as a semiconductor wafer
摘要 In a system for cleaning a workpiece or wafer, a boundary layer of heated liquid is formed on the workpiece surface. Ozone is provided around the workpiece. The ozone diffuses through the boundary layer and chemically reacts with contaminants on the workpiece surface. A jet of high velocity heated liquid is directed against the workpiece, to physically dislodge or remove a contaminant from the workpiece. The jet penetrates through the boundary layer at the point of impact. The boundary layer otherwise remains largely undisturbed. Preferably, the liquid includes water, and may also include a chemical. Steam may also be jetted onto the workpiece, with the steam also physically removing contaminants, and also heating the workpiece to speed up chemical cleaning. The workpiece and the jet of liquid are moved relative to each other, so that substantially all areas of the workpiece surface facing the jet are exposed at least momentarily to the jet. Sonic or electromagnetic energy may also be introduced to the workpiece.
申请公布号 US2002157686(A1) 申请公布日期 2002.10.31
申请号 US20010925884 申请日期 2001.08.06
申请人 SEMITOOL, INC. 发明人 KENNY MICHAEL;AEGETER BRIAN;BERGMAN ERIC;SCRANTON DANA
分类号 H01L21/304;B08B3/00;B08B3/02;B08B3/04;B08B3/08;B08B7/00;H01L21/00;H01L21/02;H01L21/306;H01L21/3065;H01L23/495;H05K3/34;(IPC1-7):B08B7/04 主分类号 H01L21/304
代理机构 代理人
主权项
地址