METHOD FOR GROWING ALUMINUM NITRIDE SINGLE CRYSTAL LAYER AND METHOD FOR FABRICATING GROUP III NITRIDE COMPOUND SEMICONDUCTOR DEVICE INCLUDING THE SAME

摘要

PURPOSE: A method for fabricating a group III nitride compound semiconductor device is provided to reduce time and manpower necessary for controlling the temperature of a substrate by providing an excellent aluminum single crystal layer as a buffer layer regarding a device function layer of the group III nitride compound semiconductor device. CONSTITUTION: A substrate is prepared. An aluminum nitride(AlN) single crystal layer is formed on the substrate. The AlN single crystal layer has a thickness of from 0.5 to 3 micrometer and has a substantially flat surface. The half-value width of an X-ray rocking curve of the AlN single crystal layer is not longer than 50 seconds. In another device, a group III nitride compound semiconductor layer having a thickness of from 0.01 to 3.2 micrometer is grown at a temperature of from 1000 to 1180 deg.C on a sapphire substrate having a surface nitride layer with a thickness of not larger than 300 angstrom.