发明名称 SEMICONDUCTOR DEVICE HAVING FUSE AND METHOD OF DISCONNECTING FUSE
摘要 PURPOSE: A semiconductor device having a fuse and a method of disconnecting the fuse are provided to be capable of reducing damages on an insulating film under a fuse upon disconnecting the fuse by a laser. CONSTITUTION: The first insulating film(12) made of silicon oxide is formed on a semiconductor substrate(11). A lower wire including lines(13a,13b) is formed on the first insulating film(12). At this time, the lower wire is made of aluminum, an aluminum alloy, or other metallic materials. At the time, the first insulating film(12) is made of PSG(Phospho-Silicate Glass), FSG(Fluoro-Silicate Glass) or other materials. The second insulating film(14) made of silicon oxide is formed on both of the first insulating film(12) and the lower wire. A fuse(15) is formed on the second insulating film(14). A high-strength protective member(14c) made of tungsten is disposed under a disconnecting point of a fuse(15). This protective member(14c) is formed simultaneously with formation of a via contact portion(14a,14b) which connects the fuse(15) with the lines(13a,13b) of the lower wire.
申请公布号 KR20020082772(A) 申请公布日期 2002.10.31
申请号 KR20020022154 申请日期 2002.04.23
申请人 FUJITSU LIMITED 发明人 ARISAKA YOSHIKAZU;NAKADA MASAYUKI;SAWADA TOYOJI;SUKEGAWA KAZUO;TATEMATSU TSUTOMU;TOGASHI KENGI;YAMADA TOMOYUKI
分类号 H01L21/82;H01L21/8242;H01L23/525;H01L27/10;H01L27/108;(IPC1-7):H01L21/82 主分类号 H01L21/82
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