| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device that can reduce production of a sub-threshold current in an operation standby state. SOLUTION: The semiconductor device where an N-channel substrate part exists in its semiconductor substrate and a plurality of PMOS transistors(TRs) 1 isolated by gate isolation gate electrodes 3 are formed on the N-channel substrate, is provided with the gate isolation gate electrodes 3, an N-channel substrate potential application section 4, a voltage application means 6 that applies a voltage to a source region 2 in a way that a voltage applied to the former is higher than a voltage applied to the latter, and a control means 7 that activates the voltage application means 6 in a standby state of the PMOS TRs 1.
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