| 发明名称 |
ION-BEAM DEPOSITION PROCESS FOR MANUFACTURING ATTENUATED PHASE SHIFT PHOTOMASK BLANKS |
| 摘要 |
An ion-beam deposition process for fabricating attenuating phase shift photomask blanks, capable of producing a phase shift of 180 DEG , and which can provide tunable optical transmission at selected lithographic wavelengths < 400 nm, comprising at least one layer of material of general formulae MzSiOxNy or MzAIOxNy, is described. |
| 申请公布号 |
WO02086620(A2) |
申请公布日期 |
2002.10.31 |
| 申请号 |
WO2002US12540 |
申请日期 |
2002.04.19 |
| 申请人 |
E.I. DU PONT DE NEMOURS AND COMPANY;CARCIA, PETER, FRANCIS |
发明人 |
CARCIA, PETER, FRANCIS |
| 分类号 |
C23C14/22;G03F1/32;G03F1/54;H01L21/027 |
主分类号 |
C23C14/22 |
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