SEMICONDUCTOR DEVICE

摘要

A semiconductor layer (30) of a gradient SiGe-HDTMOS is composed of an upper Si film (12), an Si buffer layer (13), an Si1-xGex film (14), and an Si cap layer (15). Between the source region (20a) and the drain region (20b) of the semiconductor layer (30), a high-concentration n-type Si body region (22), an n<-->Si region (23), an Si cap region (25), and an SiGe channel region (24) are provided. The Ge composition ratio x of the Si1-xGex film (14) increases from the Si buffer layer (13) toward the Si cap layer (15). In a p-type HDTMOS, the electron current of the substrate current decreases.