PLASMA ETCHING CHAMBER AND METHOD FOR FABRICATING PHOTO MASK USING THE SAME

摘要

PURPOSE: A plasma etching chamber and a method for fabricating a photo mask using the same are provided to form a pattern of a shielding layer having a uniform CD(Critical Dimension) distribution on all areas of a photo mask substrate by improving a structure of the plasma etching chamber. CONSTITUTION: A plasma etching chamber(10) is formed with a chamber wall(12), a TCP(Transformer Coupled Plasma) coil(14) installed on an upper portion of the chamber wall(12), and the first power source(16) for applying RF power to the TCP coil(14). An electrode(30) is installed on a bottom portion of the inside of the chamber wall(12). The electrode(30) is used for supporting a photo mask substrate(20). The electrode(30) has a support side(32) for supporting the photo mask substrate(20) and an upper side(34) for surrounding the support side(32) around the support side(32). A sidewall(36) is extended between the upper side(34) and the support side(32). The support side(32) has a steppe portion. The second power source(18) is connected with a lower portion of the chamber wall(12). A heat transfer element(40) is installed around an edge of the support side(32). The heat transfer element(40) is connected with a heater(50).