| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a method for manufacturing an EUV mask of high precision and reflectivity by finding an intermediate layer material capable of forming a precision pattern as an intermediate layer acting also as an etching stopper, related to a method for manufacturing the EUV mask, and the like, and to provide a method for manufacturing a semiconductor in which a pattern is transferred onto a semiconductor substrate using a provided EUV mask. SOLUTION: There are provided a multilayer film 12 on a substrate 11 which reflects EUV light as the EUV mask, an intermediate layer on the multilayer film 12 as an etching stopper 13, and an absorber layer 14 on the intermediate layer which absorbs the EUV light. A material containing at least one element selected from among Cr, N, O, and C is used as the intermediate layer, realizing an EUV mask capable of forming a precision pattern.</p> |
