| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a NAND-cell type EEPROM, in which threshold level distribution in a write-in state can be decreased. SOLUTION: This device is provided with programming control circuits (1, 3, 5, 8), which stores control write-in voltage data in a memory cell, applies control write-in voltage to the memory cell according to stored data, detects the actual write-in state of the memory cell, corrects stored data according to the actual write-in state, and applies write-in voltage to only a memory cell, for which write-in is not conducted sufficiently, so that a data detector (9), which detects stored data to discriminate whether or not sufficient write-in has been conducted for the memory cell, and generates a verify-finish signal, when sufficient write-in is performed for all memory cells.</p> |
