发明名称 METHOD OF EVALUATING POLYSILICON FILM
摘要 PROBLEM TO BE SOLVED: To objectively evaluate the state of a formed polysilicon film automatically and accurately, without contact. SOLUTION: The surface of a polysilicon film turned into polysilicon by excimer laser annealing is imaged (S1). The photographed image is divided into mesh-form regions of specified sizes (S2). For every mesh, the contrast in its mesh is computed (S3). The value of the largest contrast and the value of the smallest contrast within the imaged region are abstracted from obtained each contrast, and the radio (contrast ratio) is computed (S4). Based on this contrast ratio, average grain diameter of the polysilicon film concerned is determined (S7).
申请公布号 JP2002319606(A) 申请公布日期 2002.10.31
申请号 JP20010114411 申请日期 2001.04.12
申请人 SONY CORP 发明人 WADA HIROYUKI;UMETSU NOBUHIKO;TATSUKI KOICHI
分类号 G01N15/02;G01N21/84;G01N21/95;H01L21/20;H01L21/268;H01L21/336;H01L21/66;H01L29/786;(IPC1-7):H01L21/66 主分类号 G01N15/02
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