| 摘要 |
<p>A composition for forming an antireflection film for use in a lithographic process for semiconductor device production, which contains as a component a resin containing structural units derived from cyanuric acid, a derivative thereof, or both. The structural units are preferably represented by the following formula (1): (1) and can be contained in the main chain or side chains of the resin or in both. The antireflection film for lithography obtained from the composition has a high reflection-preventive effect and does not cause intermixing with a resist layer to give an excellent resist pattern. It has higher selectivity in dry etching than the resist.</p> |
