发明名称 |
Method and apparatus for measuring temperature parameters of an ISFET using hydrogenated amorphous as a sensing film |
摘要 |
A method and an apparatus for measuring the temperature parameters of an ISFET that uses hydrogenated amorphous silicon as a sensing film, which uses the measurements of the temperature parameters and the source/drain current and gate voltage in an unknown solution to sense the ion concentration and the pH value of the unknown solution.
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申请公布号 |
US2002158645(A1) |
申请公布日期 |
2002.10.31 |
申请号 |
US20020131777 |
申请日期 |
2002.04.23 |
申请人 |
NATIONAL YUNLIN UNIVERSITY OF SCIENCE AND TECHNOLOGY |
发明人 |
CHOU JUNG CHUAN;WANG YII FANG |
分类号 |
G01R31/26;(IPC1-7):G01R31/02 |
主分类号 |
G01R31/26 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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