发明名称 Apparatus for applying thin layers to a substrate
摘要 A process gas source (16) is connected to the vacuum chamber (5), and a metering valve (12) actuated by an automatic controller is installed between the vacuum chamber (5) and the process gas source (16). A potentiometric measurement electrode compares the amount of a gas in the vacuum chamber (5) with a reference gas by way of a reference electrode or with a solid body substituting for the reference electrode and sends a signal to automatic control unit (14), which contains a signal amplifier. The control unit then drives the generator of the power supply or the metering valve for the process gas.
申请公布号 US2002157945(A1) 申请公布日期 2002.10.31
申请号 US20020127332 申请日期 2002.04.22
申请人 SZCZYRBOWSKI JOACHIM;TESCHNER GOTZ;BRUCH JURGEN 发明人 SZCZYRBOWSKI JOACHIM;TESCHNER GOTZ;BRUCH JURGEN
分类号 C23C14/34;C23C14/00;C23C14/54;H01J37/34;(IPC1-7):C23C14/32 主分类号 C23C14/34
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