发明名称 |
Semiconductor device having a trench isolation structure and method for fabricating the same |
摘要 |
A semiconductor device and its fabrication method are provided. A semiconductor device includes first and second trench regions formed in first and second areas of a semiconductor substrate, respectively. A first device isolation layer is formed in the first trench region and includes a first trench oxide layer formed on side walls of the first trench region. A first nitride liner is formed on the side walls of the first trench oxide layer and a first insulation layer pattern is formed on the first nitride liner to fill the first trench region. A second device isolation layer is formed in the second trench region and includes a second trench oxide layer formed on the side walls of the second trench region. A second nitride liner is formed on the side walls of the second trench oxide layer. A second insulation layer pattern is formed on the second nitride liner to fill the second trench region. The first trench oxide layer is substantially thicker than the second trench oxide.
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申请公布号 |
US2002158302(A1) |
申请公布日期 |
2002.10.31 |
申请号 |
US20020135898 |
申请日期 |
2002.04.29 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM DO-HYUNG |
分类号 |
H01L21/762;(IPC1-7):H01L21/76 |
主分类号 |
H01L21/762 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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