| 摘要 |
PURPOSE: A metal electrode for an LED(Light Emitting Diode) using an n-type ZnO and a method for manufacturing the same are provided to easily form an excellent ohmic contact by using transition metals having melting point of high temperature. CONSTITUTION: A light emitting diode(100) comprises an alumina(Al2O3) substrate(110), an n-type zinc oxide(ZnO) semiconductor(120) formed on the alumina substrate(110), and a metal electrode(130) formed on the ZnO semiconductor(120). The metal electrode(130) is composed of transition metals having a melting point of high temperature. Preferably, the transition metal is one selected from groups composing of Ru, Hf, Ir, Mo, Re, W, V, Pt, Pd and Ta. Also, the melting point of the transition metal is about 1500-3500°C.
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