METHOD OF ULTRAVIOLET PROCESS FOR ACTIVATING LOW TEMPERATURE IMPURITIES OF POLYSILICON

摘要

PURPOSE: A method of a ultraviolet process for activating low temperature impurities of polysilicon is provided to activate impurities under a low temperature by using a ultraviolet lamp. CONSTITUTION: An active layer is formed on an upper portion of a glass substrate(30). A silicon oxide layer(32) and the first metal layer(33) are sequentially formed on an upper portion of the active layer. A photoresist is coated on the first metal layer(33) by using a spin coating method. A photoresist pattern is formed by an exposing process and a developing process. The first metal layer(33) and the silicon oxide layer(32) are patterned by using the photoresist pattern as a mask and performing an etch process. A gate electrode(33) and a gate insulating layer(32) are formed by patterning the first metal layer(33) and the silicon oxide layer(32). Parts(31d,31s) of the active layer are changed to polysilicon layers by performing an impurity implantation process. A thermal process is performed by using a ultraviolet lamp. An interlayer dielectric(34) is deposited thereon. A source/drain(35d,35s) are formed by performing a photo etch process.