| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a nitride semiconductor substrate which is easy in peeling from a starting substrate and is good in reproducibility, and the nitride semiconductor substrate. SOLUTION: An aluminum nitride layer 2 and a nitride semiconductor layer 3 which turns to the self-standing type nitride semiconductor substrate 3a after the removal of a sapphire substrate 1 as the starting substrate and is different from the aluminum nitride layer 2 are successively epitaxially grown on the sapphire substrate 1. The resulted epitaxial substrate is treated with water or an aqueous hydroxide solution of an alkaline metal to hydrolyze the aluminum oxide layer 2, by which the sapphire substrate 1 can be easily removed and the nitride semiconductor substrate 3a of the self-standing type is obtained with good reproducibility.
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