发明名称 Semiconductor device and manufacturing method thereof
摘要 In a manufacturing method of a semiconductor device, a substrate and a plurality of semiconductor chips stacked on the substrate are connected to each other by a ball bonding method adopting a reverse method. Specifically, after first bonding on a bonding pad on the substrate, a gold wire is led to a bonding pad of a semiconductor chip of the bottom layer, and by second bonding, a wire for connecting the substrate and the semiconductor chip of the bottom layer is formed. Similarly, other semiconductor chips are also connected to the substrate from the layer on the bottom. As a result, it is possible to reduce the package size, to provide a sufficient clearance between wires, and to reduce restrictions on combinations of semiconductor chips to be stacked.
申请公布号 US2002158325(A1) 申请公布日期 2002.10.31
申请号 US20020162864 申请日期 2002.06.06
申请人 SHARP KABUSHIKI KAISHA 发明人 YANO YUJI;NARAI ATSUYA
分类号 H01L25/18;H01L21/60;H01L25/00;H01L25/04;H01L25/065;H01L25/07;(IPC1-7):H01L21/44 主分类号 H01L25/18
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