| 摘要 |
PURPOSE: A method for forming a metal wiring is provided to be capable of preventing the reduction of breakdown voltage and cracks of an interlayer dielectric due to voids. CONSTITUTION: The first insulating layer is formed on a semiconductor substrate(30). A contact hole is formed by selectively etching the first insulating layer. A barrier metal film(37) is formed on the first insulating layer and the contact hole. A metal film(38) is formed on the barrier metal film(37). An anti-reflective coating(39) is formed on the metal film. A wiring pattern(41) is then formed by selectively etching the anti-reflective coating, the metal film and the barrier metal film. After removing the anti-reflective coating, the second insulating layer is formed on the resultant structure.
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