| 摘要 |
PROBLEM TO BE SOLVED: To provide a nitride semiconductor laser element that improves an ellipse rate without increasing operating power, and to provide a compact optical information reproducing arrangement that has low power consumption. SOLUTION: In the nitride semiconductor laser element, an active layer 17 is put between an n-type cladding layer 15 comprising n- and p-type nitride semiconductors and a p-type cladding layer 26. In addition, the p-type cladding layer 26 is composed of at least two layers where the composition is mutually different in a layer thickness direction, and a first p-type cladding layer 20 positioned near the active layer 17 has a lower refractive index than a second p-type cladding layer 21. In addition, the optical information reproducing arrangement has the semiconductor laser element. |
