| 摘要 |
PROBLEM TO BE SOLVED: To improve the response speed of a photodiode by making the series resistance of the anode section of the photodiode lowered. SOLUTION: In a semiconductor device, a P<-> -type silicon layer 7 is formed on a P<+> -type silicon substrate 6 and N-type epitaxial layers 2, divided by a P<+> -type embedded separating diffusion layer, and a P<+> -type isolation diffusion layer is laminated upon the silicon layer 7. In the regions of the adjacent expitaxial layers 2, the photodiode 20 and an NPN transistor 21 are respectively provided, and a Au anode electrode 9 of the photodiode 20 is provided on the lower surface of the silicon substrate 6, and the cathode electrode 5 of the photodiode 20 is provided on the epitaxial layer 2.
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