SEMICONDUCTOR DEVICE AND RADIO COMMUNICATION SYSTEM

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device in which the reliability of an element can be enhanced. SOLUTION: The semiconductor device comprises a gallium arsenide substrate 101. A through hole 125 is made between the opposite sides of the substrate 101. A first electrode formed on one side 101a of the substrate 101 and a second electrode 103 formed on the other side 101b of the substrate 101 are connected through a metal line 102 formed along the inner wall 108 of the through hole 125. The gallium arsenide substrate 101 is grown epitaxially by a vertical Bridgman method.