| 摘要 |
PROBLEM TO BE SOLVED: To provide an etching method which leaves no unnecessary residue. SOLUTION: Photoresist 6 is formed on an iridium layer 4 and then removed except where the iridium layer 4 is left (Fig. 1A). Then dry etching using C12 as an etchant is carried out and the iridium layer 4 at an unnecessary part is removed. At this time, the C12 as the etchant and iridium react on each other, and iridium chloride(IrC14) sticks on the side walls of the iridium layer 4 and photoresist 4 (Fig. 2B). Then liquid chemical processing using water (cold water) or alcohol or their mixture is carried out to remove the iridium chloride (IrC14). Consequently, the iridium chloride(IrC14) 8 on the side walls is removed as shown in Fig. 1C. Then the photoresist 6 is removed and O2 gas is used for ashing.
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