MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a manufacturing method for a semiconductor device, which makes it possible to easily form a film of different thickness on a semiconductor substrate and control the remaining thickness of a desired film. SOLUTION: This method includes a process of forming a gate oxide film 21 which can be etched on the semiconductor substrate 1; a process of forming a resist pattern 23 on the gate oxide film 21; a process of heating the semiconductor substrate 1 including the resist pattern 23 at heating temperature corresponding to the etching speed of the gate oxide film 21, so as to make the thickness of the gate oxide film 21 below the resist pattern 23 and the thickness of the gate oxide film 21 at a part which is not covered with the resist pattern different from each other; and a process of etching the gate oxide film 21 at the etching speed corresponding to the heating temperature by using the heated resist pattern 23 as a mask.