发明名称 |
Transparent conductive film formation process, photovoltaic device production process, transparent conductive film, and photovoltaic device |
摘要 |
In a process for forming on a substrate a transparent conductive film having crystallizability, the process comprises a first step of forming a film at a first film formation rate and a second step of forming a film at a second film formation rate, and the relationship between film formation rates in the respective steps satisfies: 2<=(second film formation rate)/(first film formation rate)<=100; which provides a process for producing a transparent conductive film by a deposition process advantageous for cost reduction, which can form in a short time a transparent conductive film having an uneven surface profile with a high light-confining effect, and can bring about an improvement in photovoltaic performance and enjoy a high mass productivity when applied to the formation of multi-layer structures of photovoltaic devices.
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申请公布号 |
US2002157703(A1) |
申请公布日期 |
2002.10.31 |
申请号 |
US20020059168 |
申请日期 |
2002.01.31 |
申请人 |
NAKAYAMA AKIYA;ECHIZEN HIROSHI;TAKAI YASUYOSHI;OKADA NAOTO;KISO SHIGEO |
发明人 |
NAKAYAMA AKIYA;ECHIZEN HIROSHI;TAKAI YASUYOSHI;OKADA NAOTO;KISO SHIGEO |
分类号 |
C23C14/02;H01L31/0224;H01L31/052;H01L31/18;(IPC1-7):B05D5/12;H01L31/00;C23C14/32 |
主分类号 |
C23C14/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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