发明名称 |
Ruthenium interconnect for an integrated circuit and method for its fabrication |
摘要 |
A multi-layered metal bond pad for a semiconductor die having a conductive metal layer and an overlying ruthenium electrode layer. The ruthenium electrode layer protects the conductive metal from oxidation due to ambient environmental conditions. An interconnect structure such as a wire bond or solder ball may be attached to the ruthenium layer to connect the semiconductor die to a lead frame or circuit support structure. Also disclosed are processes for forming the ruthenium layer.
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申请公布号 |
US2002158336(A1) |
申请公布日期 |
2002.10.31 |
申请号 |
US20020183852 |
申请日期 |
2002.06.28 |
申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
JIANG TONGBI;LI LI |
分类号 |
H01L21/288;H01L21/48;H01L21/60;H01L23/498;(IPC1-7):H01L29/40;H01L23/52;H01L23/48;H01L21/44 |
主分类号 |
H01L21/288 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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