| 摘要 |
A first semiconductor device includes a first conductive layer, a second conductive layer located above or below the first conductive layer, and an insulating layer interposed between the first conductive layer and the second conductive layer, a spiral inductor having a spiral pattern that is formed in the first conductive layer, and an electromagnetic wave shield formed in a plane shape in the second conductive layer. The electromagnetic wave shield is grounded or connected to a constant voltage source and is located above or below the spiral inductor. Furthermore the first semiconductor device includes an opening formed in the electromagnetic wave shield. The opening is located in a region corresponding to a region above or below a central region of the spiral pattern of the spiral inductor. A second semiconductor device includes a first conductive layer, a second conductive layer located above or below the first conductive layer, an insulating layer interposed between the first conductive layer and the second conductive layer, a spiral inductor having a spiral pattern that is formed in the first conductive layer, and an electromagnetic wave shield formed in a plane shape in the second conductive layer. The electromagnetic wave shield is grounded or connected to a constant voltage source and is located above or below the spiral inductor. Furthermore the second semiconductor includes a slit formed in the electromagnetic wave shield. The slit extends from a position of the electromagnetic wave shield, the position corresponding to a region above or below a center of the spiral inductor, to a peripheral direction of the electromagnetic wave shield.
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