摘要 |
A field effect transistor (FET) is disclosed that includes a heat to spreader adapted to reduce the thermal resistance and channel operating temperature of a field effect transistor used in a circuit block susceptible to self-heating effects. In one embodiment, regulatory circuit blocks of an integrated circuit, such as phase locked loops, utilize the FET to improve the characteristics of a regulatory output required by other circuit blocks, such as digital logic circuits. In one embodiment the FET is a silicon-on-insulator structure.
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