发明名称 FET circuit block with reduced self-heating
摘要 A field effect transistor (FET) is disclosed that includes a heat to spreader adapted to reduce the thermal resistance and channel operating temperature of a field effect transistor used in a circuit block susceptible to self-heating effects. In one embodiment, regulatory circuit blocks of an integrated circuit, such as phase locked loops, utilize the FET to improve the characteristics of a regulatory output required by other circuit blocks, such as digital logic circuits. In one embodiment the FET is a silicon-on-insulator structure.
申请公布号 US2002158276(A1) 申请公布日期 2002.10.31
申请号 US20010844788 申请日期 2001.04.27
申请人 MASLEID ROBERT P. 发明人 MASLEID ROBERT P.
分类号 H01L23/367;(IPC1-7):H01L29/94 主分类号 H01L23/367
代理机构 代理人
主权项
地址