| 摘要 |
PROBLEM TO BE SOLVED: To manufacture a light emitting element 5 which is used for making optical communication possible between integrated circuit elements 2 and 40 with a high-accuracy outside diameter D1 at an accurate position. SOLUTION: An SiO2 coating layer 3 is formed on an integrated circuit element 2 composed of a silicon semiconductor substrate and an electron beam 4 is projected upon a desired region to be irradiated of the layer 3 in a high- vacuum atmosphere. When the layer 3 is irradiated with the beam 4, the oxygen of the SiO2 is liberated and Si atoms appear. When the beam 4 is continuously projected upon the region, a light emitting layer 5 composed only of Si atoms reaches the integrated circuit element 2 composed of the silicon semiconductor substrate and finally formed through an SiO2 electrical insulating layer 6. A translucent electrode 7 is formed on the light emitting layer 5 and its circumference and a voltage is applied across both end sections of the layer 5 in the thickness direction. The light from the layer 5 is guided to the light receiving element 35 of another integrated circuit element 40 through a light guiding member 29 and makes optical communication possible. The outside diameter D1 of the light emitting layer 5 is adjusted to, for example, 1-20 nmϕ. |
