| 摘要 |
PROBLEM TO BE SOLVED: To obtain a free standing compound semiconductor wafer low in crack, chipping, or the like. SOLUTION: A protective film 2 covering at least the side surface of a sapphire substrate 1 is deposited on the surface of the sapphire substrate 1. Next, a GaN film 3 (a compound semiconductor film) is epitaxially grown on the exposed surface of the sapphire substrate 1. Next, the GaN film 3 is separated from the sapphire substrate 1 by laser beam irradiation, the grinding of the substrate, etching, cutting, or the like. The GaN film 3 is used as a free standing wafer. |
