| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a GaN crystal capable of using a GaN crystal thin film as a start crystal for GaN crystal growth, and to provide a base material of the crystal growth for it. SOLUTION: A GaN crystal thin film (especially GaN crystal thin film) 1 of thickness 100 μm or less which is formed as an independent thin film by a solution growth method, or the like, is jointed onto a substrate 2, to provide a crystal growth base material comprising one surface 1b of the thin film as a start surface for growing GaN crystal, on which the GaN crystal is grown. |
