| 摘要 |
PROBLEM TO BE SOLVED: To provide manufacturing method of a semiconductor device, capable of forming the electrode of a fine isolated pattern with high dimensional accuracy. SOLUTION: On a substrate provided with a capacitor lower part interlayer insulation film 1 and a plug 3, a line pattern by an electrode forming material 6 which reaches the plug 3 is formed by using a damascene process. Thereafter, since a line-like resist pattern 8 is formed so as to cross the line pattern, the line pattern, mask by the electrode formation material 6 is etched with the resist pattern 8 as a mask and an electrode composed of the electrode formation material 6, is formed at a part where the line pattern and the resist pattern 8 cross. |
