| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which has a hole of a high aspect ratio and also has its characteristics improved. SOLUTION: A GaAs substrate 100 is previously etched to form a mesa 101 as steps. After resist 102 is applied thereupon, the resist is exposed to a specific pattern and developed to form an opening part 103 between the steps 101. At this time, the mesa steps 101 are long along the length of the opening part 103, and differencesΔ1 to 5μm are formed on both the sides of the opening ends. While the mesa steps 101 are formed on the substrate 101, this resist mask is used to form a hole through plasma etching in mixed gas of chlorine and SiCl4.
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