发明名称 Process for structuring a photoresist layer
摘要 A method for structuring a photoresist layer includes the steps of providing a substrate on which a photoresist layer has been applied at least in some areas. The photoresist layer includes a film-forming polymer that contains molecule groups that can be converted into alkali-soluble groups by acid-catalyzed elimination reactions. The polymer further includes a photoacid generator that, on exposure to light from a defined wavelength range, releases an acid. The polymer additionally has a thermobase generator that releases a base when the temperature is raised. The photoresist layer is initially exposed, in some areas, to light from the defined wavelength range. The photoresist layer is then heated to a temperature at which the elimination reaction catalyzed by the photolytically generated acid takes place and the thermobase generator releases a base. Finally, the photoresist layer is developed.
申请公布号 US2002160315(A1) 申请公布日期 2002.10.31
申请号 US20020134104 申请日期 2002.04.29
申请人 RICHTER ERNST-CHRISTIAN;SEBALD MICHAEL 发明人 RICHTER ERNST-CHRISTIAN;SEBALD MICHAEL
分类号 G03F7/004;G03F7/039;(IPC1-7):G03C5/56 主分类号 G03F7/004
代理机构 代理人
主权项
地址