| 摘要 |
<p>A diffusion bonded PVD target assembly (30) includes a target blank (34) bonded directly to a backing plate (32), a majority crystal structure of the target blank comprising a HCP structure. The target blank can include cobalt and the backing plate can include an aluminum or copper alloy. The target assembly can exhibit a thickness dependent high PTF, such as at least about 60%. A PVD target fabrication method includes diffusion bonding a target blank to a backing plate, a majority crystal structure of the target blank comprising a HCP structure; transitioning at least some of the HCP structure to a non-HCP structure; and restoring a majority of the non-HCP structure to the HCP structure. The transitioning can include hot pressing the target blank and backing plate at a temperature exceeding a HCP to non-HCP transition temperature of the target blank. The restoring can include cooling at a specified low rate.</p> |
