| 摘要 |
A semiconductor device is provided. The device includes a gate electrode formed over a first conductivity type well. An LDD region is formed on either gate electrode side having a second conductivity type dopant diffusion with a low dopant concentration and a source/drain region with a high dopant concentration. The device includes a contact section connecting one side of the source drain regions having the same potential as the first conductivity type well and disposed so as to contact the LDD region on this side of the source drain. The device also includes a contact section connecting the other side of the source drain regions having a potential different from the first conductivity type well and disposed so as to not come in contact with the LDD region on this side of the source drain.
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