| 摘要 |
First of all, a semiconductor substrate that has a memory array and a periphery region thereon is provided. Then a barrier layer is formed on the gate devices of the memory array and the periphery region and on the semiconductor substrate. Next, an organic layer is formed on the barrier layer. Afterward, removing the organic layer and the barrier layer until exposing the gate devices of the memory array and the periphery region. The remainder of the organic layer is then removed by way of using an ashing process. Subsequently, a photoresist layer is formed on the memory array, and the barrier layer of the periphery region is etched until exposing the surface of the semiconductor substrate. Finally, performing a silicide process after removing the photoresist layer, so as to individually form a salicide layer on the gate devices of the memory array and the periphery region, and on the semiconductor substrate of the periphery region. |
