发明名称 Mittels Feldeffekt steuerbares Halbleiterbauelement
摘要 A semiconductor component includes a semiconductor body having a substrate of a first conduction type and a first layer of a second conduction type that is located above the substrate. A channel zone of the first conduction type is formed in the first layer. A first terminal zone of the second conduction type is configured adjacent the channel zone. A second terminal zone of the first conduction type is formed in the first layer. Compensation zones of the first conduction type are formed in the first layer. A second layer of the second conduction type is configured between the substrate and the compensation zones.
申请公布号 DE10052170(C2) 申请公布日期 2002.10.31
申请号 DE2000152170 申请日期 2000.10.20
申请人 INFINEON TECHNOLOGIES AG 发明人 TIHANYI, JENOE;SOMMER, PETER
分类号 H01L29/06;H01L29/78 主分类号 H01L29/06
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