发明名称 |
Mittels Feldeffekt steuerbares Halbleiterbauelement |
摘要 |
A semiconductor component includes a semiconductor body having a substrate of a first conduction type and a first layer of a second conduction type that is located above the substrate. A channel zone of the first conduction type is formed in the first layer. A first terminal zone of the second conduction type is configured adjacent the channel zone. A second terminal zone of the first conduction type is formed in the first layer. Compensation zones of the first conduction type are formed in the first layer. A second layer of the second conduction type is configured between the substrate and the compensation zones. |
申请公布号 |
DE10052170(C2) |
申请公布日期 |
2002.10.31 |
申请号 |
DE2000152170 |
申请日期 |
2000.10.20 |
申请人 |
INFINEON TECHNOLOGIES AG |
发明人 |
TIHANYI, JENOE;SOMMER, PETER |
分类号 |
H01L29/06;H01L29/78 |
主分类号 |
H01L29/06 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|