SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor integrated circuit device, having a test circuit which can analyze replacing a defective memory cell with a redundant memory cell. SOLUTION: A built-in self-test circuit 300 and a built-in redundancy analyzing circuit 400 are respectively provided in a plurality of DRAM cores 100.1-100.n. The built-in redundancy analysis circuit 400 determines a defective address to be replaced by a plurality of spare memory cell rows and spare memory cell columns, according to the detected result of an address signal from the built-in self-testing circuit 300 and a defective memory cell. The built-in redundancy analysis circuit 400 restricts an effective use region of an address storage circuit which stores the defective address, according to the capacity of a DRAM core to be tested.