发明名称 Fabrication method of semiconductor integrated circuit device
摘要 A fabrication method of a semiconductor integrated circuit device including polishing the entire area of an edge of a wafer, for example, by using three polishing drums in which a polishing drum polishes the upper surface of the edge of the water relatively, the polishing drum polishes the central portion of the edge of the wafer relatively and a polishing drum polishes the lower surface of the edge of the wafer relatively, thereby preventing occurrence of obstacles which cause defoliation of thin films on the edge of the wafer.
申请公布号 US2002160610(A1) 申请公布日期 2002.10.31
申请号 US20020085063 申请日期 2002.03.01
申请人 ARAI TOSHIYUKI;KAWAI RYOUSEI;TSUCHIYAMA HIROFUMI;KANAI FUMIYUKI;NAKABAYASHI SHINICHI 发明人 ARAI TOSHIYUKI;KAWAI RYOUSEI;TSUCHIYAMA HIROFUMI;KANAI FUMIYUKI;NAKABAYASHI SHINICHI
分类号 H01L21/76;H01L21/304;H01L21/3105;H01L21/3205;H01L21/321;H01L21/768;(IPC1-7):H01L21/302;H01L21/461 主分类号 H01L21/76
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