发明名称 |
Fabrication method of semiconductor integrated circuit device |
摘要 |
A fabrication method of a semiconductor integrated circuit device including polishing the entire area of an edge of a wafer, for example, by using three polishing drums in which a polishing drum polishes the upper surface of the edge of the water relatively, the polishing drum polishes the central portion of the edge of the wafer relatively and a polishing drum polishes the lower surface of the edge of the wafer relatively, thereby preventing occurrence of obstacles which cause defoliation of thin films on the edge of the wafer.
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申请公布号 |
US2002160610(A1) |
申请公布日期 |
2002.10.31 |
申请号 |
US20020085063 |
申请日期 |
2002.03.01 |
申请人 |
ARAI TOSHIYUKI;KAWAI RYOUSEI;TSUCHIYAMA HIROFUMI;KANAI FUMIYUKI;NAKABAYASHI SHINICHI |
发明人 |
ARAI TOSHIYUKI;KAWAI RYOUSEI;TSUCHIYAMA HIROFUMI;KANAI FUMIYUKI;NAKABAYASHI SHINICHI |
分类号 |
H01L21/76;H01L21/304;H01L21/3105;H01L21/3205;H01L21/321;H01L21/768;(IPC1-7):H01L21/302;H01L21/461 |
主分类号 |
H01L21/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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